IRF840A Vishay, IRF840A Datasheet - Page 2

• Manufacturer Part Number: IRF840A
• Description: MOSFET N-CH 500V 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF840A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840A

Avalanche Characteristics
Thermal Resistance
Diode Characteristics
Dynamic @ T
Static @ T
E
I
E
R
R
R
R
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
V
∆V
V
I
I
AR
S
on
DSS
GSS
d(on)
d(off)
f
SM
r
rr
AS
AR
fs
θJC
θCS
θJA
DS(on)
SD
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
(BR)DSS
2
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
Parameter
Parameter
Parameter
–––
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
3.7
2.0
–––
–––
–––
–––
––– 2.16 3.24
Intrinsic turn-on time is negligible (turn-on is dominated by L
1018 –––
1490 –––
0.58
–––
–––
–––
–––
–––
–––
–––
–––
155
–––
–––
–––
422
––– 0.85
–––
––– -100
8.0
11
23
26
19
42
56
–––
633
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
2.0
4.0
9.0
8.0
38
18
25
32
–––
µC
nC
ns
pF
µA
nA
ns
V/°C
Ω
S
V
V
V
Typ.
Typ.
0.50
–––
–––
–––
–––
ƒ = 1.0MHz, See Fig. 5
V
V
I
V
V
V
I
R
R
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
V
V
V
D
D
J
J
GS
Reference to 25°C, I
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 8.0A
= 8.0A
= 25°C, I
= 25°C, I
= 9.1Ω
= 31Ω,See Fig. 10
= 50V, I
= 400V
= 0V
= 25V
= 0V, I
= 10V, I
= V
= 500V, V
= 400V, V
= 30V
= -30V
= 10V, See Fig. 6 and 13 „
= 250V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
= 250µA
Conditions
= 8.0A, V
= 8.0A
Conditions
Conditions
= 250µA
= 4.8A
= 4.8A „
GS
GS
= 0V to 400V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
510
–––
8.0
1.0
13
62
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
„
J
G
= 0V „
= 125°C
Units
Units
°C/W
S
mJ
mJ
+L
A
D
S
D
)