IRF840A Vishay, IRF840A Datasheet - Page 5

• Manufacturer Part Number: IRF840A
• Description: MOSFET N-CH 500V 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF840A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840A

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0.01
0.1
8.0
6.0
4.0
2.0
0.0
10
0.00001
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
75
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
0.001
150
V
90%
10%
V
DS
GS
0.01
t
1. Duty factor D = t / t
2. Peak T = P
d(on)
Notes:
t
≤ 0.1 %
r
≤ 1
J
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
d(off)
C
t
1
t
t
f
2
+
-
5
1