IRF840A Vishay, IRF840A Datasheet - Page 6

• Manufacturer Part Number: IRF840A
• Description: MOSFET N-CH 500V 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF840A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840A

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
6
AS
12V
V
V
G
GS
R G
20V
V DS
Same Type as D.U.T.
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I AS
.3µF
D.U.T
0.01 Ω
L
I
G
Charge
Q
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
1200
1000
600
580
560
540
520
800
600
400
200
0
25
Fig 12d. Typical Drain-to-Source Voltage
0.0
Fig 12c. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
1.0
50
I AV , Avalanche Current ( A)
Vs. Avalanche Current
2.0
Vs. Drain Current
J
3.0
75
4.0
100
5.0
TOP
BOTTOM
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6.0
125
7.0
°
3.6A
5.1A
8.0A
I D
150
8.0