IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 2
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IRF6216TRPBF
Manufacturer Part Number
IRF6216TRPBF
Description
MOSFET P-CH 150V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6216TRPBF.pdf
(8 pages)
Specifications of IRF6216TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
49nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 1.3A, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.2 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6216TRPBF
Manufacturer:
IR
Quantity:
20 000
Diode Characteristics
IRF6216
Dynamic @ T
Avalanche Characteristics
Static @ T
V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
I
DSS
GSS
AR
SM
d(on)
r
d(off)
f
S
rr
V
fs
AS
DS(on)
(BR)DSS
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
-150
–––
-3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.7
Min. Typ. Max. Units
–––
–––
–––
–––
–––
-0.17
1280 –––
1290 –––
–––
––– 0.240
–––
–––
––– -250
––– -100
–––
–––
220
220
–––
–––
–––
310
7.2
80
33
15
18
15
33
26
53
99
–––
-5.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
120
460
-25
-2.2
–––
11
23
49
-19
µA
nA
nC
ns
nS
nC
V/°C
pF
V
V
S
A
V
Typ.
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
Reference to 25°C, I
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= -1.3A
= -1.3A
= 25°C, I
= 25°C, I
= 6.5
= 0V, I
= -10V, I
= V
= -150V, V
= -120V, V
= -20V
= 20V
= -50V, I
= -120V
= -10V,
= -75V
= -10V
= 0V
= -25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
DS
DS
Conditions
= -250µA
D
D
Conditions
Conditions
= -1.3A, V
= -1.3A
= -250µA
= -1.3A
= -1.3A
GS
GS
= 0V to -120V
Max.
= -1.0V, ƒ = 1.0MHz
= -120V, ƒ = 1.0MHz
200
-4.0
= 0V
= 0V, T
www.irf.com
D
= -1mA
GS
J
G
= 0V
= 125°C
Units
mJ
A
D
S