IRF6648 International Rectifier, IRF6648 Datasheet - Page 2

• Manufacturer Part Number: IRF6648
• Description: MOSFET N-CH 60V 86A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6648

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 86 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 13 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 29 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

…
Notes:
IRF6648
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
E
V
t
Q
Electrical Characteristic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
rr
GS(th)
AS
SD
DS(on)
G (Internal)
iss
oss
rss
oss
oss
g
Q
Q
Q
Q
sw
oss
rr
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Single Pulse Avalanche Energy
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
Parameter
gs2
J
+ Q
= 25°C (unless otherwise specified)
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
60
31
0.076
2120
2450
–––
–––
–––
–––
–––
–––
600
170
440
–––
–––
5.5
-11
4.0
7.5
2.7
1.0
36
14
12
17
21
16
29
28
13
31
37
-100
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
4.9
1.3
20
50
47
47
56
21
mV/°C
V/°C
mΩ
mJ
µA
nA
nC
nC
nC
pF
ns
ns
V
V
S
Ω
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 14
V
V
I
R
See Fig. 16
V
V
ƒ = 1.0MHz
V
V
T
L = 0.082mH. See Fig. 13
T
T
di/dt = 100A/µs g
D
D
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 17A
= 17A
= 6.2Ω
= 25°C, I
= 25°C, I
= 25°C, I
= V
= 60V, V
= 48V, V
= 10V, I
= 30V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 30V, V
= 0V
= 0V, V
= 0V, V
GS
, I
D
Conditions
D
Conditions
S
Conditions
S
F
DS
DS
D
D
= 250µA
GS
GS
GS
GS
= 17A, V
= 34A, R
= 17A, V
= 150µA
= 17A g
= 17A
= 1.0V, f=1.0MHz
= 48V, f=1.0MHz
= 0V
= 0V, T
= 0V
= 10V g
D
DD
www.irf.com
GS
G
= 1mA
J
= 25Ω
= 125°C
= 0V g
= 30V