IRF6648 International Rectifier, IRF6648 Datasheet - Page 7

• Manufacturer Part Number: IRF6648
• Description: MOSFET N-CH 60V 86A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6648

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 86 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 13 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 29 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DirectFET™ Substrate and PCB Layout, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

www.irf.com
‚
+
-
D.U.T
ƒ
+
-
•
•
•
•
SD
Fig 17.
•
•
•
-
G
„
+
HEXFET
D
D
+
-
®
Re-Applied
Voltage
Power MOSFETs
G
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
S
S
P.W.
SD
DS
Waveform
Waveform
D = DRAIN
G = GATE
S = SOURCE
Ripple ≤ 5%
Body Diode
Period
for N-Channel
Body Diode Forward
D
D
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
IRF6648
=10V
7