IRF6648 International Rectifier, IRF6648 Datasheet - Page 4

• Manufacturer Part Number: IRF6648
• Description: MOSFET N-CH 60V 86A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6648

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 86A
• Vgs(th) (max) @ Id: 4.9V @ 150µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2120pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MN
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 m Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 86 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 13 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 29 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 6. Typical Capacitance vs.Drain-to-Source Voltage
IRF6648
4
10000
1000
1000
1000
100
100
100
0.1
Fig 4. Typical Transfer Characteristics
10
10
Fig 2. Typical Output Characteristics
1
1
0.1
2
1
V DS = 10V
≤60µs PULSE WIDTH
TOP
BOTTOM
T J = 150°C
T J = 25°C
T J = -40°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
VGS
15V
10V
8.0V
7.0V
6.0V
C oss
C rss
C iss
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
6
1
6.0V
8
100
10
10
Fig 5. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
Fig 7. Typical Total Gate Charge vs
1
Fig 3. Typical Output Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
0
I D = 86A
V GS = 10V
TOP
BOTTOM
I D = 17A
Gate-to-Source Voltage
5
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
10
VGS
15V
10V
8.0V
7.0V
6.0V
15
V DS = 48V
V DS = 30V
≤ 60µs PULSE WIDTH
Tj = 150°C
20
1
25
6.0V
30
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35
10
40