NTD4810N-35G ON Semiconductor, NTD4810N-35G Datasheet

NTD4810N-35G

Manufacturer Part Number

NTD4810N-35G

Description

MOSFET N-CH 30V 8.6A IPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD4810N-35G.pdf (8 pages)

Specifications of NTD4810N-35G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

10 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

8.6A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 4.5V

Input Capacitance (ciss) @ Vds

1350pF @ 12V

Power - Max

1.28W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak (3 straight short leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.01 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

10.8 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4810N-35G

Manufacturer:

Quantity:

12 500

Current page: 1 of 8
Download datasheet (295Kb)

NTD4810N

Power MOSFET

30 V, 54 A, Single N- -Channel, DPAK/IPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

June, 2010 - - Rev. 8

Continuous Drain

Current (R

Power Dissipation

Continuous Drain

Current (R

Power Dissipation

Continuous Drain

Current (R

(Note 1)

Power Dissipation

Pulsed Drain Current

Current Limited by Package

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain--to--Source Avalanche

Energy (V

L = 1.0 mH, I

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Drain--to--Source Voltage

Gate--to--Source Voltage

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These are Pb- -Free Devices

CPU Power Delivery

DC- -DC Converters

θJA

θJC

) (Note 1)

) (Note 2)

) (Note 1)

DS(on)

θJA

θJC

L(pk)

= 24 V, V

) (Note 1)

) (Note 2)

)

to Minimize Conduction Losses

Parameter

= 14 A, R

= 10 V,

Steady

State

=10ms

= 25°C unless otherwise noted)

= 25 Ω)

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

DmaxPkg

dV/dt

, T

DSS

stg

-- 55 to

Value

20

10.8

1.28

120

175

260

8.4

2.0

8.6

6.7

6.0

V/ns

Unit

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

CASE 369AA

(Bent Lead)

1 2

Drain

Drain 3

(BR)DSS

STYLE 2

30 V

DPAK

Source

ORDERING INFORMATION

4810N = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENTS

http://onsemi.com

Gate

15.7 mΩ @ 4.5 V

(Straight Lead)

10 mΩ @ 10 V

CASE 369AC

= Year

= Work Week

= Pb--Free Package

Drain

DS(on)

Drain

3 IPAK

2 3

Publication Order Number:

Source

MAX

Gate

N- -Channel

(Straight Lead

CASE 369D

NTD4810N/D

Drain

DPAK)

IPAK

54 A

MAX

Source

Related parts for NTD4810N-35G

NTD4810N-35G Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4810N = Device Code G = Pb--Free Package ORDERING INFORMATION Publication Order Number: NTD4810N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient -- Steady State (Note 1) Junction--to--Ambient -- Steady State (Note 2) 1. Surface--mounted on FR4 board using pad size Cu. 2. Surface--mounted on FR4 board using ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter DRAIN- -SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance (T = 25°C unless otherwise ...

Page 4

25° 4 DRAIN--TO--SOURCE VOLTAGE (VOLTS) DS Figure 1. On- -Region Characteristics 0.048 0.043 0.038 0.033 ...

Page 5

iss 1500 1000 C rss 500 C rss GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 ...

Page 6

... ORDERING INFORMATION Order Number NTD4810NT4G NTD4810N--1G NTD4810N--35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES 25°C 100°C 125°C ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED 90 CW ° SOLDERING FOOTPRINT* 6 ...

Page 8

... R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 ------ 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4810N/D ...

Related keywords

ntd4809
ntd4863n
ntd4858n
ntd4858
ntd4815n
ntd4813
ntd4810n
ntd4810
ntd4806
ntd4856n
ntd4815nh
ntd4810nh
ntd4865nt4g
ntd4813nht4g
ntd4810nt4g
ntd4806nt4g
NTD4810N-35G datasheet
NTD4810N-35G data sheet
NTD4810N-35G pdf datasheet
NTD4810N-35G component
NTD4810N-35G part
NTD4810N-35G distributor
NTD4810N-35G RoHS
NTD4810N-35G datasheet download