NTD4810N-35G ON Semiconductor, NTD4810N-35G Datasheet - Page 6

• Manufacturer Part Number: NTD4810N-35G
• Description: MOSFET N-CH 30V 8.6A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4810N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1350pF @ 12V
• Power - Max: 1.28W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
NTD4810NT4G
NTD4810N--1G
NTD4810N--35G
Specifications Brochure, BRD8011/D.
0.01
1.0
0.1
1.0E--05
0.02
D = 0.5
0.05
0.1
Order Number
0.2
SINGLE PULSE
0.01
1.0E--04
100
0.1
10
1
1
TYPICAL PERFORMANCE CURVES
Figure 13. Avalanche Characteristics
125°C
1.0E--03
Figure 14. Thermal Response
IPAK Trimmed Lead
(3.5  0.15 mm)
http://onsemi.com
10
PULSE WIDTH (ms)
(Pb--Free)
(Pb--Free)
(Pb--Free)
Package
DPAK
IPAK
t, TIME (ms)
100°C
P
6
(pk)
1.0E--02
DUTY CYCLE, D = t
t
1
100
t
2
25°C
1.0E--01
1
/t
2
1000
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
θJC
(t) = r(t) R
-- T
2500 Tape & Reel
C
75 Units/Rail
75 Units/Rail
= P
Shipping
θJC
(pk)
1.0E+00
1
R
θJC
†
(t)
1.0E+01