NTMFS4833NT1G ON Semiconductor, NTMFS4833NT1G Datasheet

NTMFS4833NT1G

Manufacturer Part Number

NTMFS4833NT1G

Description

MOSFET N-CH 30V 16A SO-8FL

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheets

1.NTMFS4833NT3G.pdf (7 pages)

2.NTMFS4833NT1G.pdf (7 pages)

Specifications of NTMFS4833NT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

16A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

58nC @ 4.5V

Input Capacitance (ciss) @ Vds

5600pF @ 12V

Power - Max

910mW

Mounting Type

Surface Mount

Package / Case

5-DFN, SO8 FL

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.3 m Ohms

Forward Transconductance Gfs (max / Min)

30 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

191 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.002Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

20V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SO-FL

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTMFS4833NT1G
NTMFS4833NT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMFS4833NT1G

Manufacturer:

Quantity:

721

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMFS4833NT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 7
Download datasheet (90Kb)

NTMFS4833N

Power MOSFET

30 V, 191 A, Single N-Channel, SO-8 FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

*For additional information on our Pb-Free strategy and soldering details, please

July, 2007 - Rev. 3

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

MAXIMUM RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain-to-Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These are Pb-Free Devices*

CPU Power Delivery

DC-DC Converters

Low Side Switching

qJA

qJC

= 35 A

(Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 1.0 mH, R

= 25°C, V

to Minimize Conduction Losses

Parameter

Steady

State

= 30 V, V

= 25 W)

= 25°C unless otherwise stated)

= 10 ms

= 25°C,

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 10 V,

= 25°C

= 85°C

= 25°C

Symbol

dV/dt

EAS

, T

DSS

STG

-55 to

Value

612.5

+150

2.35

0.91

±20

191

138

125

288

104

260

V/ns

Unit

°C

†For information on tape and reel specifications,

NTMFS4833NT1G

NTMFS4833NT3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SO-8 FLAT LEAD

(BR)DSS

30 V

(Note: Microdot may be in either location)

CASE 488AA

Device

STYLE 1

G (4)

ORDERING INFORMATION

N-CHANNEL MOSFET

= Assembly Location

= Year

= Work Week

= Pb-Free Package

http://onsemi.com

3.0 mW @ 4.5 V

2.0 mW @ 10 V

D (5,6)

DS(ON)

(Pb-Free)

Package

SO-8 FL

Publication Order Number:

MAX

S (1,2,3)

MARKING

DIAGRAM

1500/Tape & Reel

5000/Tape & Reel

NTMFS4833N/D

AYWWG

4833N

Shipping

191 A

MAX

†

Related parts for NTMFS4833NT1G

NTMFS4833NT1G Summary of contents

Page 1

... Microdot may be in either location) I 104 A S dV/dt 6 V/ns EAS 612.5 mJ Device °C T 260 L NTMFS4833NT1G NTMFS4833NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX DS(ON 191 A 3 ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – Steady State (Note 4) 3. Surface-mounted on FR4 board using 1 sq-in pad Cu. 4. Surface-mounted on FR4 board using the minimum recommended ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 5. Pulse Test: pulse width v 300 ms, duty ...

Page 4

V thru 10 V 175 T = 25°C J 150 125 100 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0.010 0.008 0.006 0.004 0.002 ...

Page 5

C iss 7000 6000 5000 4000 C rss 3000 2000 1000 - GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance ...

Page 6

NTMFS4833N TYPICAL PERFORMANCE CURVES 1000 100 100 PULSE WIDTH (ms) Figure 13. Avalanche Characteristics http://onsemi.com 6 25°C 100°C 125°C 1,000 10,000 ...

Page 7

... M 3.200 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center ...

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