NTMFS4833NT1G ON Semiconductor, NTMFS4833NT1G Datasheet - Page 2

• Manufacturer Part Number: NTMFS4833NT1G
• Description: MOSFET N-CH 30V 16A SO-8FL
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTMFS4833NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5600pF @ 12V
• Power - Max: 910mW
• Mounting Type: Surface Mount
• Package / Case: 5-DFN, SO8 FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 m Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 191 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.002Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO-FL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMFS4833NT1G; NTMFS4833NT1GOSTR

3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction-to-Case (Drain)
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – Steady State (Note 4)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
t
(BR)DSS
Q
t
t
d(OFF)
d(OFF)
C
C
I
I
d(ON)
d(ON)
GS(TH)
C
G(TOT)
Q
Q
G(TOT)
DSS
GSS
DS(on)
g
G(TH)
T
OSS
RSS
t
t
t
t
ISS
FS
GD
GS
r
f
r
f
J
/T
http://onsemi.com
/
J
NTMFS4833N
V
V
V
GS
GS
GS
V
V
V
V
V
GS
V
= 4.5 V, V
2
= 4.5 V, V
V
DS
GS
= 0 V, f = 1 MHz, V
V
V
GS
GS
GS
I
V
DS
11.5 V
D
GS
GS
= 10 V to
DS
= 24 V
= 4.5 V
= 0 V,
= 11.5 V, V
= 15 A, R
= 11.5 V, V
Test Condition
= 0 V, V
= 0 V, I
= V
= 15 V, I
R
Symbol
I
G
R
R
R
D
DS
DS
DS
qJC
qJA
qJA
= 3.0 W
= 30 A
, I
= 15 V, I
D
= 15 V; I
GS
D
G
= 250 mA
D
DS
DS
= 250 mA
= 3.0 W
= ±20 V
= 15 A
= 15 V,
= 15 V;
T
T
DS
I
I
I
I
J
J
D
D
D
D
D
D
= 125°C
= 25 °C
= 15 A,
= 30 A
= 15 A
= 30 A
= 15 A
= 12 V
= 30 A
Value
137.8
53.2
1.0
Min
30
1.5
5600
1200
Typ
7.12
650
17
1.3
1.3
2.3
2.3
6.0
25
34
35
17
14
19
50
10
30
39
16
17
88
±100
Max
10
2.5
2.0
3.0
58
1
°C/W
Unit
mV/°C
mV/°C
Unit
mA
nA
mW
ns
ns
nC
nC
pF
V
V
S