NTMFS4833NT1G ON Semiconductor, NTMFS4833NT1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4833NT1G
• Description: MOSFET N-CH 30V 16A SO-8FL
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTMFS4833NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5600pF @ 12V
• Power - Max: 910mW
• Mounting Type: Surface Mount
• Package / Case: 5-DFN, SO8 FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.3 m Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 191 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.002Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO-FL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMFS4833NT1G; NTMFS4833NT1GOSTR

0.010
0.008
0.006
0.004
0.002
200
175
150
125
100
1.25
0.75
0.25
1.75
75
50
25
1.5
1.0
0.5
0
0
0
-50
0
2
I
V
Figure 3. On-Resistance vs. Gate-to-Source
D
GS
V
= 30 A
-25
DS
V
Figure 1. On-Region Characteristics
Figure 5. On-Resistance Variation with
= 10 V
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
4.2 V thru 10 V
T
4
J
, JUNCTION TEMPERATURE (°C)
0
T
25
2
Temperature
J
6
= 25°C
Voltage
50
3
8
75
TYPICAL PERFORMANCE CURVES
100
V
I
T
GS
4
D
10
J
= 30 A
= 25°C
= 4.0 V
125
http://onsemi.com
3.8 V
NTMFS4833N
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
150
5
12
4
100,000
10,000
1,000
0.004
0.003
0.002
0.001
100
200
175
150
125
100
75
50
25
0
0
0
0
25
Figure 4. On-Resistance vs. Drain Current and
V
Figure 6. Drain-to-Source Leakage Current
V
T
GS
J
DS
V
V
= 25°C
DS
50
= 0 V
GS
≥ 10 V
Figure 2. Transfer Characteristics
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
I
D
75
, DRAIN CURRENT (AMPS)
10
T
Gate Voltage
J
vs. Voltage
V
2
V
100
= 25°C
GS
GS
T
= 11.5 V
= 4.5 V
15
J
= 125°C
T
T
125
J
J
= 150°C
= 125°C
3
T
20
J
150
= -55°C
4
25
175
200
30
5