BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 15

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
9. Package outline
Fig 17. Package outline SOT467C
BLF871_BLF871S_4
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
inch
mm
VERSION
OUTLINE
SOT467C
0.184
0.155
4.67
3.94
A
0.220
0.210
5.59
5.33
H
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
0.364
0.356
9.25
9.04
D
0.365
0.355
9.27
9.02
D 1
0.233
0.227
5.92
5.77
JEDEC
E
D 1
U 1
REFERENCES
Rev. 04 — 19 November 2009
0.235
0.225
D
q
b
5.97
5.72
E 1
3
0
1
2
0.065
0.055
1.65
1.40
F
scale
18.54
17.02
EIAJ
0.73
0.67
w 2
H
5
p
M
C
0.135
0.125
3.43
3.18
C
M
p
10 mm
0.087
0.077
2.21
1.96
w 1
F
B
Q
M
A
14.27
0.562
M
q
BLF871; BLF871S
B
M
20.45
20.19
0.805
0.795
U 1
E 1
UHF power LDMOS transistor
PROJECTION
EUROPEAN
0.235
0.225
5.97
5.72
U 2
c
Q
0.010 0.020
0.25
w 1
0.51
w 2
E
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
99-12-06
99-12-28
SOT467C
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