BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 16

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
Fig 18. Package outline SOT467B
BLF871_BLF871S_4
Product data sheet
Earless LDMOST ceramic package; 2 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
Unit
SOT467B
Outline
version
(1)
max
nom
max
nom
min
min
0.184
0.155
4.67
3.94
A
5.59
5.33
0.22
0.21
b
0.006
0.004
0.15
0.10
IEC
c
H
0.364
0.356
9.25
9.04
D
U
A
L
2
0.365
0.355
9.27
9.02
D
1
JEDEC
0.233
0.227
5.92
5.77
E
0.235
0.225
5.97
5.72
References
E
Rev. 04 — 19 November 2009
1
D
U
D
3
1
2
b
0
1
1
0.065
0.055
1.65
1.40
F
18.29
17.27
JEITA
0.72
0.68
H
scale
5
w
2.92
2.16
0.115
0.085
2
L
D
F
A
0.087
0.077
2.21
1.96
Q
10 mm
E
0.385
0.375
9.78
9.53
U
1
1
0.235
0.225
5.97
5.72
Q
U
BLF871; BLF871S
2
0.25
0.01
w
c
2
UHF power LDMOS transistor
European
projection
E
© NXP B.V. 2010. All rights reserved.
Issue date
08-12-09
09-10-27
sot467b_po
SOT467B
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