BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 17

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF871_BLF871S_4
Product data sheet
Document ID
BLF871_BLF871S_4
Modifications:
BLF871_3
BLF871_2
BLF871_1
Revision history
Table 10.
Acronym
CW
CCDF
DVB
DVB-T
ESD
HF
IMD3
LDMOS
LDMOST
OFDM
PAR
PEP
RF
TTF
UHF
VSWR
Release date
20091119
20090921
20090305
20081218
•
This document now describes both the BLF871 and the BLF871S.
Abbreviations
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
Objective data sheet
Rev. 04 — 19 November 2009
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
High Frequency
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
Change notice
-
-
-
-
BLF871; BLF871S
UHF power LDMOS transistor
Supersedes
BLF871_3
BLF871_2
BLF871_1
-
© NXP B.V. 2010. All rights reserved.
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