BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 11

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF578_2
Product data sheet
Document ID
BLF578_2
Modifications:
BLF578_1
Revision history
Table 10.
Acronym
CW
EDGE
GSM
HF
LDMOS
LDMOST
RF
TTF
VSWR
Abbreviations
Release date
20100204
20081211
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Table 1 on page
Section 1 on page
Table 4 on page
Table 5 on page
Table 5 on page
Figure 1 on page
Table 6 on page
Table 6 on page
Table 7 on page
Section 8.2.1 on page
Description
Continuous Wave
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Time To Failure
Voltage Standing-Wave Ratio
Rev. 02 — 4 February 2010
Data sheet status
Product data sheet
Objective data sheet
1: added information for CW performance.
2: changed maximum value of I
3: changed value of R
3: added information about Z
3: added values vor V
3: changed typical value of I
4: changed some values.
3: added figure.
1: changed typical value of η
6: changed some graphs.
GSq
th(j-c)
.
.
Change notice
-
-
DSX
th(j-c)
D
D
.
.
.
.
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
BLF578
Supersedes
BLF578_1
-
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