BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 3

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
[2]
[3]
6. Characteristics
BLF578_2
Product data sheet
Symbol
R
Z
Fig 1.
th(j-c)
th(j-c)
Z
T
R
See
(K/W)
th(j-c)
j
th(j-c)
(1) δ = 1 %
(2) δ = 2 %
(3) δ = 5 %
(4) δ = 10 %
(5) δ = 20 %
(6) δ = 50 %
(7) δ = 100 % (DC)
0.18
0.12
0.06
is the junction temperature.
Figure
0
10
is measured under RF conditions.
Transient thermal impedance from junction to case as function of pulse duration
−7
Parameter
thermal resistance from junction to case
transient thermal impedance from junction to case
Thermal characteristics
1.
10
−6
(7)
(6)
(5)
(4)
Table 6.
T
Symbol Parameter
V
V
V
I
DSS
j
(BR)DSS
GS(th)
GSq
= 25
°
C; per section unless otherwise specified.
10
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
−5
DC characteristics
10
−4
Rev. 02 — 4 February 2010
10
−3
(3)
(2)
(1)
Conditions
T
T
j
j
Conditions
V
V
V
= 150 °C
= 150 °C; t
GS
DS
DS
GS
= 0 V; I
= 10 V; I
= 50 V; I
= 0 V; V
10
−2
p
D
DS
D
D
= 100 μs; δ = 20 %
= 2.5 mA
= 500 mA
= 20 mA
= 50 V
10
−1
Power LDMOS transistor
Min
110
1.25
0.8
-
1
Typ
-
1.7
1.3
-
© NXP B.V. 2010. All rights reserved.
[1][2]
t
p
001aak924
BLF578
(s)
[3]
Typ
0.14
0.04
Max
-
2.25
1.8
2.8
10
3 of 14
Unit
K/W
K/W
Unit
V
V
V
μA