BLF578,112 NXP Semiconductors, BLF578,112 Datasheet - Page 7

• Manufacturer Part Number: BLF578,112
• Description: TRANSISTOR PWR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF578,112

• Transistor Type: LDMOS
• Frequency: 108MHz
• Gain: 26dB
• Voltage - Rated: 110V
• Current Rating: 88A
• Current - Test: 40mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: SOT539A
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 88A
• Drain Source Voltage (max): 110V
• Output Power (max): 1200W
• Power Gain (typ)@vds: 26@50V/24@50VdB
• Frequency (max): 225MHz
• Package Type: LDMOST
• Pin Count: 5
• Drain Source Resistance (max): 70(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 403@50VpF
• Output Capacitance (typ)@vds: 138@50VpF
• Reverse Capacitance (typ): 3@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 71%
• Mounting: Screw
• Mode Of Operation: CW/Pulsed RF
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5103-5; 934063155112; BLF578,112

NXP Semiconductors
BLF578_2
Product data sheet
Fig 7.
Fig 9.
(dB)
(dB)
G
G
(1) I
(2) I
(3) I
(4) I
(1) V
(2) V
(3) V
(4) V
(5) V
p
p
26
24
22
20
18
26
24
22
20
18
100
100
V
Power gain as a function of load power;
typical values
I
Power gain as a function of load power;
typical values
Dq
Dq
Dq
Dq
Dq
DS
DS
DS
DS
DS
DS
= 0 mA
= 40 mA
= 80 mA
= 160 mA
= 40 mA; f = 225 MHz; t
= 50 V; f = 225 MHz; t
= 30 V
= 35 V
= 40 V
= 45 V
= 50 V
400
400
(1)
700
700
(2)
(4)
(3)
(2)
(1)
(3)
1000
1000
p
p
= 100 μs; δ = 20 %.
= 100 μs; δ = 20 %.
(4)
1300
1300
001aak928
001aak931
P
P
(5)
L
L
(W)
(W)
1600
1600
Rev. 02 — 4 February 2010
Fig 8.
Fig 10. Drain efficiency as a function of load power;
(%)
(%)
η
η
(1) I
(2) I
(3) I
(4) I
(1) V
(2) V
(3) V
(4) V
(5) V
D
D
80
60
40
20
80
60
40
20
0
0
100
100
V
Drain efficiency as a function of load power;
typical values
I
typical values
Dq
Dq
Dq
Dq
Dq
DS
DS
DS
DS
DS
DS
= 0 mA
= 40 mA
= 80 mA
= 160 mA
= 40 mA; f = 225 MHz; t
= 50 V; f = 225 MHz; t
= 30 V
= 35 V
= 40 V
= 45 V
= 50 V
400
400
(1)
(2)
700
700
(3)
Power LDMOS transistor
1000
1000
p
p
= 100 μs; δ = 20 %.
= 100 μs; δ = 20 %.
(1)
(2)
(3)
(4)
(4)
1300
1300
© NXP B.V. 2010. All rights reserved.
001aak929
001aak933
(5)
BLF578
P
P
L
L
(W)
(W)
1600
1600
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