ATF-521P8-TR2 Avago Technologies US Inc., ATF-521P8-TR2 Datasheet - Page 11

• Manufacturer Part Number: ATF-521P8-TR2
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-521P8-TR2

• Gain: 17dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 26.5dBm
• Package / Case: 8-LPCC
• Drain Source Voltage Vds: 4.5V
• Continuous Drain Current Id: 500mA
• Power Dissipation Pd: 1.5W
• Noise Figure Typ: 1.5dB
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Frequency Min: 50MHz
• Drain Current Idss Max: 200mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-521P8 Typical Scattering Parameters, V
Freq.
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.5
2
2.5
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Typical Noise Parameters, V
Freq
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
Notes:
1. F
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
11
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
calculated. Refer to the noise parameter application section for more information.
the gate lead. The output reference plane is at the end of the drain lead.
min
values at 2 GHz and higher are based on measurements while the F
Mag.
0.913
0.900
0.896
0.893
0.882
0.895
0.893
0.895
0.897
0.895
0.893
0.889
0.882
0.888
0.883
0.885
0.892
0.894
0.880
0.876
0.879
0.889
0.881
0.893
0.891
0.888
0.845
0.828
0.827
F
dB
0.60
0.72
0.81
0.92
1.24
1.50
1.60
1.88
2.02
min
S
11
Ang.
‑84.6
‑125.0
‑142.0
‑152.3
‑158.4
‑164.2
‑167.8
‑170.8
‑173.0
‑175.5
176.0
169.2
163.6
157.9
146.8
137.7
128.0
120.4
105.7
96.5
84.4
72.8
62.4
54.0
42.1
34.1
25.3
13.2
‑10.2
Γ
Mag.
0.19
0.30
0.44
0.56
0.59
0.70
0.75
0.81
0.68
opt
DS
= 4.5V, I
Γ
Ang.
162.00
164.00
176.97
‑164.98
‑155.51
‑136.55
‑128.59
‑117.31
‑109.54
opt
dB
34.2
30.3
27.4
25.1
23.4
21.8
20.6
19.5
18.5
17.6
14.1
11.8
10.0
8.4
5.9
3.8
2.1
0.6
‑1.0
‑1.9
‑3.0
‑3.8
‑5.2
‑6.3
‑7.2
‑8.3
‑9.1
‑11.2 0.28
‑11.0 0.28
DS
= 120 mA
S
Mag.
51.26
32.80
23.39
17.89
14.75
12.36
10.71
9.39
8.44
7.59
5.07
3.89
3.15
2.62
1.97
1.55
1.28
1.08
0.89
0.81
0.71
0.65
0.55
0.48
0.44
0.39
0.35
21
DS
R
3.0
2.6
2.0
2.0
3.4
11.1
16.0
24.0
28.8
= 4.5V, I
n
Ang.
135.4
115.4
106.1
100.3
96.3
92.9
90.5
88.0
86.1
83.6
75.3
67.8
61.2
54.6
40.7
28.2
16.7
5.1
‑8.7
‑20.8
‑32.7
‑44.3
‑56.0
‑66.6
‑72.6
‑79.2
‑89.6
‑95.9
‑92.5
DS
G
dB
20.0
18.3
15.9
13.6
11.1
9.7
8.7
7.6
5.6
= 120 mA
a
mins
dB
‑36.4
‑33.9
‑33.4
‑32.9
‑32.6
‑32.7
‑32.4
‑32.3
‑32.2
‑31.8
‑31.1
‑30.0
‑29.0
‑28.2
‑26.5
‑25.2
‑24.0
‑22.8
‑21.2
‑20.1
‑19.3
‑18.6
‑18.1
‑17.7
‑17.3
‑16.8
‑16.1
‑15.6
‑16.6
below 2 GHz have been extrapolated. The F
-10.0
-20.0
Figure 42. MSG/MAG and |S
Frequency at 4.5V, 120 mA.
40.0
30.0
20.0
10.0
0.0
S
Mag.
0.015
0.020
0.021
0.023
0.023
0.023
0.024
0.024
0.025
0.026
0.028
0.032
0.036
0.039
0.047
0.055
0.063
0.072
0.087
0.099
0.108
0.118
0.125
0.130
0.136
0.144
0.157
0.167
0.147
12
0
MSG
5
Ang.
49.0
31.2
25.3
23.5
22.5
20.6
20.4
21.1
22.1
23.0
25.5
27.9
30.2
30.2
29.7
26.3
21.9
18.2
10.6
3.2
‑5.2
‑13.5
‑23.1
‑31.4
‑38.4
‑45.9
‑55.0
‑64.2
‑86.1
S
FREQUENCY (GHz)
21
10
MAG
21
Mag.
0.423
0.499
0.522
0.530
0.531
0.537
0.537
0.539
0.539
0.540
0.538
0.528
0.526
0.528
0.536
0.556
0.576
0.591
0.585
0.602
0.605
0.624
0.642
0.664
0.697
0.732
0.751
0.821
0.654
15
|
2
vs.
S
22
Ang.
‑106.6
‑139.4
‑153.4
‑161.1
‑165.0
‑168.4
‑171.2
‑173.1
‑174.8
‑176.9
177.4
172.2
168.1
163.9
155.7
148.1
140.5
133.1
124.3
114.9
104.5
94.2
83.4
72.4
65.1
56.7
50.4
44.0
39.9
20
min
values are based on
MSG/MAG
dB
35.3
32.1
30.5
28.9
28.1
27.3
26.5
25.9
25.3
24.7
22.6
20.8
19.4
16.9
13.6
11.6
10.2
8.9
6.6
5.7
4.7
4.3
2.7
2.2
1.2
0.4
‑1.5
‑3.9
‑4.3
min
is