ATF-521P8-TR2 Avago Technologies US Inc., ATF-521P8-TR2 Datasheet - Page 8

• Manufacturer Part Number: ATF-521P8-TR2
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-521P8-TR2

• Gain: 17dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 26.5dBm
• Package / Case: 8-LPCC
• Drain Source Voltage Vds: 4.5V
• Continuous Drain Current Id: 500mA
• Power Dissipation Pd: 1.5W
• Noise Figure Typ: 1.5dB
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Frequency Min: 50MHz
• Drain Current Idss Max: 200mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-521P8 Typical Performance Curves
Tuned for Optimal P1dB
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
8
Figure 33. PAE @ P1dB vs. I
at 2 GHz.
Figure 36. OIP3 vs. Temp and Freq
tuned for optimal P1dB at 4.5V, 200 mA.
Figure 39. PAE vs Temp and Freq
tuned for optimal P1dB at 4.5V.
60
55
50
45
40
35
30
25
20
50
45
40
35
30
25
20
15
60
50
40
30
20
10
0
100
0.5
0.5
150
1
1
1.5
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
200
4.5V
4V
3V
I dq (mA)
2
2
250
2.5
2.5
dq
300
and V
3
3
85°C
25°C
-40°C
85°C
25°C
-40°C
350
3.5
3.5
ds
400
4
4
, continued (at 25°C unless specified otherwise)
Figure 34. PAE @ P1dB vs. I
at 900 MHz.
Figure 37. P1dB vs. Temp and Freq
(tuned for optimal P1dB at 4.5V, 200 mA).
55
50
45
40
35
30
25
20
32
30
28
26
24
22
20
100
0.5
150
1
1.5
200
FREQUENCY (GHz)
4.5V
4V
3V
I dq (mA)
2
250
2.5
dq
300
and V
3
85°C
25°C
-40°C
350
ds
3.5
400
4
Figure 35. PAE @ P1dB vs. I
at 3.9 GHz.
Figure 38. Gain vs. Temp and Freq
tuned for optimal P1dB at 4.5V, 200 mA.
40
35
30
25
20
20
15
10
5
0
100
0.5
150
1
1.5
200
FREQUENCY (GHz)
4.5V
4V
3V
I dq (mA)
2
250
2.5
dq
300
and V
3
85°C
25°C
-40°C
350
3.5
ds
400
4