BLF6G22-45,135 NXP Semiconductors, BLF6G22-45,135 Datasheet - Page 24
![IC BASESTATION DRIVER SOT608A](/photos/5/64/56476/sot-608a_sot608a_pkg_sml.jpg)
BLF6G22-45,135
Manufacturer Part Number
BLF6G22-45,135
Description
IC BASESTATION DRIVER SOT608A
Manufacturer
NXP Semiconductors
Specifications of BLF6G22-45,135
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
2.11GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
1.5µA
Current - Test
405mA
Voltage - Test
28V
Power - Output
2.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060066135
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
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Wireless connectivity
Wireless connectivity: Wi-Fi (802.11)
Performance comparison: BGW200 vs. BGW211
4
Product
BGW211
BGW200
Frequency bands
Modulations
Data rates
Transmit power (15 dBm)
Receive power
Standard
compliance
802.11g
802.11b
External
components
required
0
3
Design
footprint
(mm
BGW200
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS)
1, 2, 5.5, 11 Mbps
731 mW
415 mW
2
150
180
)
Standby
power
consumption
< 2 mW
< 2 mW
Bluetooth
1.1/1.2
coexistence QoS
•
•
•
•
ARM7
processor Integrated memory
•
•
BGW211
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS), OFDM
1, 2, 5.5 Mbps (802.11b)
6, 9, 12, 18, 24, 36, 48, 54 Mbps (802.11g)
550 mW (802.11b)
600 mW (802.11g)
300 mW (802.11b)
400 mW (802.11g)
1.25-MB SRAM
256-KB ROM
1.25-MB SRAM
256-KB ROM
Host
interfaces
Optimized
SDIO/SPI
Optimized
SDIO/SPI
SiP package
dimensions (mm)
10 x 15 x 1.3
10 x 15 x 1.3
Pins
68
68
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