BLF6G22-45,135 NXP Semiconductors, BLF6G22-45,135 Datasheet - Page 84

IC BASESTATION DRIVER SOT608A

BLF6G22-45,135

Manufacturer Part Number
BLF6G22-45,135
Description
IC BASESTATION DRIVER SOT608A
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF6G22-45,135

Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
2.11GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
1.5µA
Current - Test
405mA
Voltage - Test
28V
Power - Output
2.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060066135
BLF6G22-45 /T3
BLF6G22-45 /T3
Small-signal discretes
Double low V
(1)
(2)
BISS loadswitches
(2)
4
V
(V)
V
(V)
15
15
15
15
40
40
40
40
Device mounted on a PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint
CEO
15
15
15
15
40
40
60
60
60
50
50
50
CEO
I
(A)
C
0.5
0.5
0.5
0.5
1.0
2.0
1.0
1.0
1.0
2.5
2.5
2.5
I
(A)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
C
CEsat
Polarity
2 x PNP
NPN/PNP
2 x NPN
NPN/PNP
NPN/PNP
NPN/PNP
2 x NPN
2 x PNP
NPN/PNP
2 x NPN
2 x PNP
NPN/PNP
(BISS) transistors
Type
PBLS1501V
PBLS1502V
PBLS1503V
PBLS1504V
PBLS4001V
PBLS4002V
PBLS4003V
PBLS4004V
Type
PBSS3515VS
PBSS2515VPN
PBSS2515VS
PBSS2515YPN
PBSS4140DPN
PBSS4240DPN
PBSS4160DS
PBSS5160DS
PBSS4160DPN
PBSS4350SS
PBSS5350SS
PBSS4350SPN
R1, R2
(kΩ)
2.2
4.7
10
22
2.2
4.7
10
22
h
(min/typ)
200/ -
200/ -
200/ -
200/ -
300/ -
300/ -
250/500
200/350
250/500
200/350
FE
0.01
0.01
0.01
0.01
0.001
0.001
0.001
0.001
0.001
@ I
C
(A)
R
@ I
300
300
300
300
440
440
440
440
CEsat
C
@ V
(V)
2
2
2
2
5
5
5
5
5
typ (mΩ)
CE
V
I
< 150
< 150
< 150
<150
130
80
115
120
115
@ I
B
CEsat
= 0.025 A
(3)
C
(3)
/100
(3)
(3)
(3)
= 0.5 A;
/120
typ (mV)
V
@ I
150
150
150
150
220
220
220
220
CEsat
TBD
TBD
TBD
(3)
C
2
2
(3)
= 0.5 A
typ (mV)
(3)
@ I
V
max (mV)
< 250
< 250
< 250
< 250
< 500
< 400/530
< 250
< 330
< 250/330
CEsat
C
= 0.5 A; I
V
@ I
250
250
250
250
350
350
350
350
CEsat
C
B
0.5
0.5
0.5
0.5
1
2
1
1
1
max (mV)
= 0.05 A
@ I
C
(A)
0.05
0.05
0.05
0.05
0.1
0.2
0.1
0.1
0.1
@ I
Package
SOT666
SOT666
SOT666
SOT666
SOT666
SOT666
SOT666
SOT666
B
(A)
Package
SOT666
SOT666
SOT666
SOT363 (SC-88)
SOT457 (SC-74)
SOT457 (SC-74)
SOT457 (SC-74)
SOT457 (SC-74)
SOT457 (SC-74)
SO8
SO8
SO8
Size (mm)
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
Size (mm)
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
1.6 x 1.2 x 0.55
2.0 x 1.25 x 0.95
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
2.9 x 1.5 x 1.0
4.9 x 3.9 x 1.75
4.9 x 3.9 x 1.75
4.9 x 3.9 x 1.75
P
(mW)
300
300
300
300
300
300
300
300
Continued next page
tot
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
P
500
500
500
430
750
750
750
750
750
TBD
TBD
TBD
tot
(mW)
(1)
(1)
(1)
(1)
(2)
(2)
(2)
(2)
(2)

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