BFP 740 E6327 Infineon Technologies, BFP 740 E6327 Datasheet

TRANSISTOR RF NPN 30MA SOT-343

BFP 740 E6327

Manufacturer Part Number
BFP 740 E6327
Description
TRANSISTOR RF NPN 30MA SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 740 E6327

Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.7V
Frequency - Transition
42GHz
Noise Figure (db Typ @ F)
0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain
27dB
Power - Max
160mW
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 25mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
160 @ 25mA @ 3V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
42000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4 V
Emitter- Base Voltage Vebo
1.2 V
Continuous Collector Current
0.03 A
Power Dissipation
160 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 740 E6327
BFP740E6327INTR
BFP740E6327XT
SP000016424
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Provides outstanding performance for
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
• High maximum stable gain
• Gold metallization for extra high reliability
• 150 GHz f
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP740
1
Pb-containing package may be available upon special request
a wide range of wireless applications
up to 10 GHz and more
Outstanding noise figure F = 0.85 dB at 6 GHz
G
ms
= 27 dB at 1.8 GHz
T
-Silicon Germanium technology
Marking
R7s
1=B
1)
2=E
Pin Configuration
3=C
1
4=E
-
4
-
3
Package
SOT343
2009-12-04
BFP740
1
2

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BFP 740 E6327 Summary of contents

Page 1

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T > 0°C A ≤ 0° Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation ≤ 89° Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. and download the latest version before actually starting your design. The simulation data have been generated and verified GHz ...

Page 5

Total power dissipation P tot 180 mW 140 120 100 105 120 °C Permissible Pulse Load ƒ totmax totDC ...

Page 6

Third order Intercept Point Ω ) (Output parameter 1.8 GHz 1.00V ...

Page 7

Power gain parameter 0.5 1 1 [V] CE Noise figure ...

Page 8

Source impedance for min. noise figure vs. frequency 1.5 0.5 0 8mA c 0.3 0.2 2.4GHz 3GHz 0.1 1.8GHz 4GHz 0.9GHz 0.2 0.4 1 ...

Page 9

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 10

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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