BFP 740 E6327 Infineon Technologies, BFP 740 E6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 740 E6327
• Description: TRANSISTOR RF NPN 30MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 740 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
• Gain: 27dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 160 @ 25mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 42000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 740 E6327; BFP740E6327INTR; BFP740E6327XT; SP000016424

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
180
140
120
100
80
60
40
20
-
0
2
1
0
10
0
/P
-7
totDC
15
10
30
-6
= ƒ (t
10
45
-5
p
60
)
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
75
10
90 105 120 °C
tot
-3
= ƒ (T
10
-2
S
)
T
T
s
S
P
150
10
0
5
Permissible Pulse Load R
Collector-base capacitance C
f = 1 MHz
K/W
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.2
0.1
10
10
10
0
0
3
2
1
10
-7
10
2
-6
10
4
-5
10
V
CB
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
6
-4
[V]
10
thJS
-3
8
2009-12-04
10
cb
= ƒ (t
-2
BFP740
= ƒ (V
10
t
p
s
p
)
CB
12
10
)
0