BFP 740 E6327 Infineon Technologies, BFP 740 E6327 Datasheet - Page 6

• Manufacturer Part Number: BFP 740 E6327
• Description: TRANSISTOR RF NPN 30MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 740 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
• Gain: 27dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 160 @ 25mA @ 3V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 42000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 740 E6327; BFP740E6327INTR; BFP740E6327XT; SP000016424

Third order Intercept Point IP
(Output, Z
V
Power gain G
V
CE
CE
30
27
24
21
18
15
12
55
50
45
40
35
30
25
20
15
10
= parameter, f = 1.8 GHz
= 3 V, I
9
6
3
0
5
0
0
S
5
1
C
= Z
= 25 mA
ma
10
L
= 50 Ω )
, G
2
1.00V
|S
G
21
ms
ms
15
|
2
f [GHz]
I
C
[mA]
3
= ƒ (f)
20
4
2.00V
25
3
= ƒ (I
5
30
4.00V
3.00V
G
ma
C
)
35
6
6
Transition frequency f
f = 2 GHz
V
Power gain G
V
f = parameter
CE
CE
50
45
40
35
30
25
20
15
10
34
32
30
28
26
24
22
20
18
16
14
12
10
= parameter
= 3 V
5
0
0
0
5
5
ma
10
10
, G
ms
15
15
I
I
C
C
[mA]
[mA]
= ƒ (I
T
= ƒ (I
20
20
C
)
2009-12-04
25
25
C
)
BFP740
2V to 4V
30
30
1.00V
0.75V
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
0.50V
35
35