BFP 405 E6433 Infineon Technologies, BFP 405 E6433 Datasheet

BFP 405 E6433

Manufacturer Part Number

BFP 405 E6433

Description

TRANSISTOR RF NPN 4.5V SOT-343

Manufacturer

Infineon Technologies

Datasheet

1.BFP405E6327.pdf (9 pages)

Specifications of BFP 405 E6433

Package / Case

SC-70-4, SC-82-4, SOT-323-4, SOT-343

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

25GHz

Noise Figure (db Typ @ F)

1.25dB @ 1.8GHz

Gain

23dB

Power - Max

75mW

Dc Current Gain (hfe) (min) @ Ic, Vce

60 @ 5mA, 4V

Current - Collector (ic) (max)

25mA

Mounting Type

Surface Mount

Configuration

Single Dual Emitter

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Maximum Operating Frequency

25 GHz

Collector- Emitter Voltage Vceo Max

4.5 V

Continuous Collector Current

0.012 A

Power Dissipation

55 mW

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BFP405E6433XT
SP000011033

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NPN Silicon RF Transistor

• For low current applications

• For oscillators up to 12 GHz

• Noise figure F = 1.25 dB at 1.8 GHz

• SIEGET  25 GHz f

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP405

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

T S is measured on the collector lead at the soldering point to the pcb

outstanding G

> 0 °C

≤ 0 °C

≤ 108 °C

= 23 dB at 1.8 GHz

Marking

ALs

- Line

1=B

2=E

Pin Configuration

3=C

Symbol

CEO

CES

CBO

EBO

tot

stg

4=E

-65 ... 150

Value

150

4.5

4.1

1.5

Package

SOT343

2009-11-06

BFP405

Unit

°C

Related parts for BFP 405 E6433

BFP 405 E6433 Summary of contents

Page 1

NPN Silicon RF Transistor • For low current applications • For oscillators GHz • Noise figure 1.8 GHz outstanding 1.8 GHz ms • SIEGET  25 GHz ...

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified ...

Page 5

Total power dissipation P tot 100 Permissible Pulse Load ƒ totmax totDC 0.005 0.01 ...

Page 6

Transition frequency GHz V = parameter GHz ƒ (I Power gain G , ...

Page 7

Noise figure F = ƒ Sopt 2.5 2 1 Noise figure F = ƒ ( ...

Page 8

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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