BFP 405 E6433 Infineon Technologies, BFP 405 E6433 Datasheet - Page 2

• Manufacturer Part Number: BFP 405 E6433
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 405 E6433

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Gain: 23dB
• Power - Max: 75mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 55 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP405E6433XT; SP000011033

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 5 mA, V
= 0.5 V, I
= 15 V, V
= 5 V, I
B
E
CE
= 0
C
= 0
BE
= 0
= 4 V, pulse measured
thJA
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
4.5
60
-
-
-
Values
Value
≤ 555
typ.
95
5
-
-
-
max.
2009-11-06
100
130
10
1
-
BFP405
Unit
V
µA
nA
µA
-
Unit
K/W