BLS2731-10,114 NXP Semiconductors, BLS2731-10,114 Datasheet - Page 4

• Manufacturer Part Number: BLS2731-10,114
• Description: TRANSISTOR RF POWER SOT445C
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-10,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 10dB
• Power - Max: 145W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 250mA, 5V
• Current - Collector (ic) (max): 1.5A
• Mounting Type: Surface Mount
• Package / Case: SOT-445C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Other names: 934045790114; BLS2731-10 TRAY; BLS2731-10 TRAY

Philips Semiconductors
APPLICATION INFORMATION
RF performance at T
1998 Nov 25
handbook, halfpage
Class-C; t
Microwave power transistor
V
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(3) f = 3.1 GHz.
Fig.2
CB
MODE OF OPERATION
(dB)
G p
= 40 V; class-C; t
16
12
8
4
0
0
p
Power gain as a function of load power;
typical values.
= 100 s; = 10%
p
h
= 100 s;
4
= 25 C in a common-base test circuit.
= 10%.
8
(1)
(2)
(3)
P L (W)
2.7 to 3.1
(GHz)
MDA227
f
12
4
V
(V)
40
CE
handbook, halfpage
V
(1) f = 2.7 GHz.
(2) f = 3.1 GHz.
(3) f = 2.9 GHz.
Fig.3
CB
(%)
= 40 V; class-C; t
60
40
20
C
0
0
Collector efficiency as a function of load
power; typical values.
typ. 12.5
(W)
P
10
L
p
= 100 s;
4
= 10%.
typ. 10
(dB)
G
9
p
8
BLS2731-10
Product specification
P L (W)
MDA228
(1)
(2)
(3)
typ. 45
12
(%)
35
C