BLS2731-50,114 NXP Semiconductors, BLS2731-50,114 Datasheet

TRANSISTOR RF POWER SOT422A

BLS2731-50,114

Manufacturer Part Number
BLS2731-50,114
Description
TRANSISTOR RF POWER SOT422A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS2731-50,114

Package / Case
SOT-422A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
75V
Frequency - Transition
3.1GHz
Gain
9dB
Power - Max
80W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1.5A, 5V
Current - Collector (ic) (max)
6A
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
80000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934045770114
BLS2731-50 TRAY
BLS2731-50 TRAY
Product specification
Supersedes data of 1997 Nov 05
DATA SHEET
BLS2731-50
Microwave power transistor
DISCRETE SEMICONDUCTORS
1998 Jan 30

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BLS2731-50,114 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1998 Jan 30 PINNING - SOT422A handbook, halfpage (GHz) (V) 2.7 to 3.1 40 WARNING 2 Product specification BLS2731-50 PIN DESCRIPTION 1 collector 2 emitter 3 base; connected to flange MBK051 Fig.1 Simplified outline. ...

Page 3

... BE open collector t 100 100 0.2 mm from ceramic cap PARAMETER CONDITIONS mA; open emitter MHz (GHz) (V) 2 Product specification BLS2731-50 MIN. 10 CONDITIONS t = 100 s; = 10%; note 1 p MIN. TYP (W) (dB typ. 60 typ. 9 MAX. UNIT +200 C 200 C 235 C VALUE UNIT ...

Page 4

... class- Fig.4 Input impedance as function of frequency (series components); typical values. 1998 Jan 30 MGM533 handbook, halfpage (3) (2) ( (W) V MGM535 handbook, halfpage 3.2 f (GHz BLS2731- (dB 2.6 2 class- 100 Fig.3 Power gain as function of frequency; typical values 2.6 2 class- Fig.5 Load impedance as function of frequency (series components) ...

Page 5

... The other side is unetched and serves as a ground plane ATC 200A ATC 100A ATC 700A 150 Tekelec trimmer 37281SL 0.4 to 2.5 pF. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 1998 Jan Product specification BLS2731- output C4 MGM537 = 2.2), thickness 0.38 mm. ...

Page 6

... F H 10.29 8.76 10.29 1.58 21.61 10.03 8.51 10.03 1.47 21.08 0.405 0.345 0.405 0.062 0.89 0.395 0.335 0.395 0.058 0.83 REFERENCES JEDEC EIAJ 6 Product specification BLS2731- 3.43 3.35 22.99 9.91 16.51 3.18 2.92 22.73 9.65 0.135 0.132 0.905 0.390 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jan 30 7 Product specification BLS2731-50 ...

Page 8

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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