BLS2731-10,114 NXP Semiconductors, BLS2731-10,114 Datasheet - Page 5

• Manufacturer Part Number: BLS2731-10,114
• Description: TRANSISTOR RF POWER SOT445C
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-10,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 10dB
• Power - Max: 145W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 250mA, 5V
• Current - Collector (ic) (max): 1.5A
• Mounting Type: Surface Mount
• Package / Case: SOT-445C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Other names: 934045790114; BLS2731-10 TRAY; BLS2731-10 TRAY

Philips Semiconductors
1998 Nov 25
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
Fig.4
V
Fig.6
CB
CB
(dB)
G p
( )
= 40 V; class-C; t
= 40 V; class-C; P
16
12
20
Z i
16
12
8
4
0
8
4
0
2.6
2.7
Power gain and efficiency as functions of
frequency; typical values.
Input impedance as function of frequency
(series components); typical values.
2.8
p
L
x i
r i
G p
= 100 s;
2.8
= 10 W.
C
2.9
= 10%.
3
3
f (GHz)
f (GHz)
MDA229
MDA231
3.1
3.2
(%)
80
60
40
20
0
C
5
handbook, halfpage
handbook, halfpage
V
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(3) f = 3.1 GHz.
Fig.5
V
Fig.7
CB
CB
(W)
P L
( )
Z L
= 40 V; class-C; t
= 40 V; class-C; P
12
20
16
12
8
4
0
8
4
0
2.6
0
Load power as a function of drive power;
typical values.
Load impedance as function of frequency
(series components); typical values.
R L
X L
p
L
= 100 s;
0.4
2.8
= 10 W.
= 10%.
(1)
0.8
3
BLS2731-10
Product specification
(2)
f (GHz)
P D (W)
MDA230
MDA232
(3)
3.2
1.2