MT48LC4M32LFF5-8 IT:G TR Micron Technology Inc, MT48LC4M32LFF5-8 IT:G TR Datasheet - Page 52

• Manufacturer Part Number: MT48LC4M32LFF5-8 IT:G TR
• Description: DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA T/R
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48LC4M32LFF5-8 IT:G TR

• Density: 128 Mb
• Maximum Clock Rate: 125 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 19|8|7 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15:
Table 16:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Data output high voltage: Logic 1; All inputs
Data output low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ are disabled; 0V ≤ V
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Data output high voltage: Logic 1; All inputs
Data output low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ are disabled; 0V ≤ V
DC Electrical Characteristics and Operating Conditions (LC Version)
Notes 1, 6 apply to entire table; notes appear on page 57; V
DC Electrical Characteristics and Operating Conditions (V Version)
Notes 1, 6 apply to entire table; notes appear on page 57; V
±0.15V
IN
IN
≤ V
≤ V
DD
DD
(All other pins not under test = 0V)
(All other pins not under test = 0V)
OUT
OUT
≤ V
≤ V
DD
DD
Q
Q
52
V
IH
Symbol
V
V
(non-DQ)
Symbol
IH
V
V
V
I
V
DD
V
OZ
(DQ)
V
V
DD
OH
I
V
OL
V
DD
V
I
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OZ
DD
OH
I
OL
Q
IH
IL
I
Q
DD
DD
= +3.3V ±0.3V, V
= 2.5 ±0.2V, V
128Mb: x16, x32 Mobile SDRAM
V
DD
Min
–0.3
2.4
Min
1.65
1.25
1.25
–0.3
–5
–5
2.3
3
3
2
Q - 0.2
–
–5
–5
–
Electrical Specifications
V
DD
V
DD
V
Max
DD
3.6
3.6
0.8
0.4
Q = +2.5V ±0.2V or +1.8V
DD
DD
–
5
5
+0.55
+ 0.3
Max
Q + 0.3
2.7
2.7
0.2
©2001 Micron Technology, Inc. All rights reserved.
Q = +3.3V ±0.3V
5
5
–
+ 0.3
Units
µA
µA
V
V
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
Notes
Notes
22
22
22
22