MT48LC8M16A2TG-75:G Micron Technology Inc, MT48LC8M16A2TG-75:G Datasheet - Page 27

• Manufacturer Part Number: MT48LC8M16A2TG-75:G
• Description: DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC8M16A2TG-75:G

• Density: 128 Mb
• Maximum Clock Rate: 133 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Organization: 8Mx16
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Not Compliant, Contains lead / RoHS non-compliant

Figure 13:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
Consecutive READ Bursts
Notes:
Data from any READ burst may be truncated with a subsequent READ command, and
data from a fixed-length READ burst may be immediately followed by data from a READ
command. In either case, a continuous flow of data can be maintained. The first data
element from the new burst either follows the last element of a completed burst or the
last desired data element of a longer burst that is being truncated. The new READ
command should be issued x cycles before the clock edge at which the last desired data
element is valid, where x = CL - 1.
This is shown in Figure 13 for L = 2 and CL = 3; data element n + 3 is either the last of a
burst of four or the last desired of a longer burst. The 128Mb SDRAM uses a pipelined
architecture and, therefore, does not require the 2n rule associated with a prefetch archi-
tecture. A READ command can be initiated on any clock cycle following a previous READ
command. Full-speed random read accesses can be performed to the same bank, as
shown in Figure 14 on page 28, or each subsequent READ may be performed to a
different bank.
COMMAND
COMMAND
1. Each READ command may be to any bank. DQM is LOW.
ADDRESS
ADDRESS
CLK
CLK
DQ
DQ
T0
T0
BANK,
COL n
BANK,
READ
COL n
READ
CL = 2
T1
T1
NOP
NOP
CL = 3
27
T2
T2
NOP
NOP
D
OUT
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
NOP
NOP
D
n + 1
D
n
OUT
OUT
TRANSITIONING DATA
T4
T4
BANK,
BANK,
READ
COL b
READ
COL b
X = 1 cycle
n + 1
n + 2
D
D
OUT
OUT
128Mb: x4, x8, x16 SDRAM
X = 2 cycles
T5
T5
NOP
NOP
n + 2
D
n + 3
D
OUT
OUT
©1999 Micron Technology, Inc. All rights reserved.
T6
T6
NOP
NOP
n + 3
D
D
OUT
OUT
b
DON’T CARE
Operations
T7
NOP
D
OUT
b