PBLS2002S,115 NXP Semiconductors, PBLS2002S,115 Datasheet - Page 3

• Manufacturer Part Number: PBLS2002S,115
• Description: LOADSWITCH PNP 20V 3A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS2002S,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 3A
• Voltage - Collector Emitter Breakdown (max): 50V, 20V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 100MHz
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Configuration: Dual Dual Collector
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 4.7 KOhms at NPN
• Typical Resistor Ratio: 1 at NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V at NPN, 20 V at PNP
• Peak Dc Collector Current: 100 mA at NPN, 3000 mA at PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060278115; PBLS2002S T/R; PBLS2002S T/R

NXP Semiconductors
5. Limiting values
PBLS2002S_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
TR1; PNP low V
V
V
V
I
I
I
I
P
TR2; NPN resistor-equipped transistor
V
V
V
V
I
I
P
Per device
P
T
T
T
C
CM
B
BM
O
CM
j
amb
stg
CBO
CEO
EBO
tot
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
Device mounted on a ceramic PCB, Al
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
positive
negative
CEsat
(BISS) transistor
Rev. 02 — 24 August 2009
2
O
3
, standard footprint.
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
open emitter
open base
open collector
single pulse;
t
T
T
p
p
p
amb
amb
amb
1 ms
1 ms
1 ms
25 C
25 C
25 C
[1]
[2]
[3]
[1]
[1]
[2]
[3]
20 V PNP BISS loadswitch
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
PBLS2002S
© NXP B.V. 2009. All rights reserved.
Max
0.55
0.87
1.43
50
50
10
+30
100
100
0.2
0.7
1.0
1.5
150
+150
+150
20
20
5
3
5
0.5
1
10
Unit
V
V
V
A
A
A
A
W
W
W
V
V
V
V
V
mA
mA
W
W
W
W
2
C
C
C
.
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