PBLS2002S,115 NXP Semiconductors, PBLS2002S,115 Datasheet - Page 8

• Manufacturer Part Number: PBLS2002S,115
• Description: LOADSWITCH PNP 20V 3A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS2002S,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 3A
• Voltage - Collector Emitter Breakdown (max): 50V, 20V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 100MHz
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Configuration: Dual Dual Collector
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 4.7 KOhms at NPN
• Typical Resistor Ratio: 1 at NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V at NPN, 20 V at PNP
• Peak Dc Collector Current: 100 mA at NPN, 3000 mA at PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060278115; PBLS2002S T/R; PBLS2002S T/R

NXP Semiconductors
PBLS2002S_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
1.1
0.9
0.7
0.5
0.3
0.1
0
V
TR1 (PNP): DC current gain as a function of
collector current; typical values
V
TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
1
1
CE
amb
amb
amb
CE
amb
amb
amb
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
10
10
3
3
I
I
006aaa800
006aaa802
C
C
(mA)
(mA)
Rev. 02 — 24 August 2009
10
10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
1.1
0.9
0.7
0.5
0.3
0.1
5
4
3
2
1
0
0
T
TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
I
TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
1
C
amb
amb
amb
amb
/I
B
I
B
= 20
(mA) =
= 25 C
= 55 C
= 25 C
= 100 C
0.4
10
(1)
(2)
(3)
0.8
10
20 V PNP BISS loadswitch
2
PBLS2002S
1.2
45.0
40.5
36.0
31.5
27.0
22.5
18.0
13.5
9.0
4.5
10
© NXP B.V. 2009. All rights reserved.
3
1.6
I
006aaa801
006aaa803
C
V
CE
(mA)
(V)
10
2.0
4
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