MMBT3906TT1G ON Semiconductor, MMBT3906TT1G Datasheet

TRANS PNP GP 40V 200MA SC75-3

MMBT3906TT1G

Manufacturer Part Number
MMBT3906TT1G
Description
TRANS PNP GP 40V 200MA SC75-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT3906TT1G

Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
200mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Frequency (max)
250MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-416
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3906TT1GOSTR

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MMBT3906TT1
General Purpose
Transistors
PNP Silicon
applications. It is housed in the SOT−416/SC−75 package which is
designed for low power surface mount applications.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation,
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation,
Thermal Resistance, Junction−to−Ambient
(Note 2)
Junction and Storage Temperature Range
This transistor is designed for general purpose amplifier
Pb−Free Package is Available
FR−4 Board (Note 1) @T
Derated above 25°C
FR−4 Board (Note 2) @T
Derated above 25°C
Characteristic
Rating
(T
A
= 25°C)
A
A
= 25°C
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
CEO
CBO
EBO
P
P
I
, T
qJA
qJA
C
D
D
stg
−55 to +150
Value
−200
−5.0
Max
−40
−40
200
600
300
400
1.6
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT3906TT1
MMBT3906TT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
AMPLIFIER TRANSISTORS
upon manufacturing location.
Device
(Note: Microdot may be in either location)
GENERAL PURPOSE
ORDERING INFORMATION
SURFACE MOUNT
2A
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
SOT−416/SC−75
1
= Device Code
= Date Code*
= Pb−Free Package
1
CASE 463
(Pb−Free)
SOT−416
SOT−416
Package
STYLE 1
3
2A M G
COLLECTOR
1
Publication Order Number:
EMITTER
G
3
2
2
3000 / Tape & Reel
3000 / Tape & Reel
MMBT3906TT1/D
Shipping

Related parts for MMBT3906TT1G

MMBT3906TT1G Summary of contents

Page 1

... R qJA P D 300 mW 2.4 mW/°C °C/W R 400 qJA ° −55 to +150 J stg MMBT3906TT1 MMBT3906TT1G †For information on tape and reel specifications, 1 http://onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 1 BASE 2 EMITTER CASE 463 SOT−416/SC−75 STYLE 1 MARKING DIAGRAM ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note −1.0 mAdc Collector −Base Breakdown Voltage = −10 mAdc Emitter −Base Breakdown Voltage = −10 mAdc, ...

Page 3

D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 < +10.6 V 300 ns DUTY CYCLE = 2% Figure 2. Delay and Rise Time Equivalent Test Circuit TYPICAL ...

Page 4

1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 6. Turn −On Time ...

Page 5

I , COLLECTOR CURRENT (mA) C Figure 10. Current Gain 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 ...

Page 6

0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25°C BE(sat) J 0.8 0.6 0.4 0 CE(sat 1.0 ...

Page 7

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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