MMBT3906TT1G ON Semiconductor, MMBT3906TT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT3906TT1G
• Description: TRANS PNP GP 40V 200MA SC75-3
• Manufacturer: ON Semiconductor

Specifications of MMBT3906TT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3906TT1GOSTR

+10.6 V
0.001
7.0
5.0
2.0
1.0
3.0
10
0.01
1.0
0.1
0.1
0.00001
Figure 2. Delay and Rise Time
0.05
0.01
D = 0.5
0.1
0.02
0.2
SINGLE PULSE
0.2 0.3 0.5 0.7
Equivalent Test Circuit
< 1 ns
DUTY CYCLE = 2%
REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Capacitance
0.0001
300 ns
1.0
C
C
obo
10 k
ibo
2.0 3.0 5.0 7.0 10
0.001
TYPICAL TRANSIENT CHARACTERISTICS
* Total shunt capacitance of test jig and connectors
Figure 1. Normalized Thermal Response
3 V
275
C
0.01
S
20 30 40
http://onsemi.com
< 4 pF*
MMBT3906TT1
DUTY CYCLE = 2%
10 < t
t, TIME (s)
3
1
< 500 ms
T
T
J
J
0.1
= 25°C
= 125°C
5000
3000
2000
1000
0
700
500
300
200
100
70
50
1.0
+9.1 V
V
I
C
t
CC
/I
1
B
2.0 3.0
= 40 V
= 10
1.0
Figure 3. Storage and Fall Time
10.9 V
I
C
< 1 ns
Figure 5. Charge Data
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Equivalent Test Circuit
10
1N916
10 k
Q
T
20
30
100
50 70 100
3 V
Q
A
275
C
S
< 4 pF*
1000
200