MMBT3906TT1G ON Semiconductor, MMBT3906TT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT3906TT1G
• Description: TRANS PNP GP 40V 200MA SC75-3
• Manufacturer: ON Semiconductor

Specifications of MMBT3906TT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3906TT1GOSTR

500
300
200
100
5.0
4.0
3.0
2.0
1.0
70
50
30
20
10
7
5
0
0.1
1.0
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
0.2
C
2.0 3.0
= 1.0 mA
0.4
I
Figure 6. Turn −On Time
C
SOURCE RESISTANCE = 200 W
I
, COLLECTOR CURRENT (mA)
C
5.0 7.0
= 0.5 mA
1.0
f, FREQUENCY (kHz)
Figure 8.
10
2.0
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
t
d
@ V
4.0
SOURCE RESISTANCE = 2.0 k
I
C
20
OB
= 50 mA
(V
= 0 V
t
30
r
CE
@ V
10
= −5.0 Vdc, T
CC
50
20
NOISE FIGURE VARIATIONS
= 3.0 V
70
I
C
/I
100
40
B
= 10
http://onsemi.com
MMBT3906TT1
15 V
2.0 V
40 V
A
200
100
= 25°C, Bandwidth = 1.0 Hz)
4
500
300
200
100
8.0
6.0
4.0
2.0
70
50
30
20
10
12
10
7
5
0
1.0
0.1
f = 1.0 kHz
0.2
2.0 3.0
0.4
I
R
C
, COLLECTOR CURRENT (mA)
S
5.0 7.0
, SOURCE RESISTANCE (kW)
Figure 7. Fall Time
1.0
I
C
I
Figure 9.
C
2.0
10
= 0.5 mA
/I
I
C
B
= 10
= 1.0 mA
4.0
I
C
20
/I
B
= 20
30
10
50
20
V
I
B1
70
CC
I
I
C
= I
C
= 40 V
100
= 100 mA
40
= 50 mA
B2
100
200