MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT3904WT1G
• Description: TRANS GP SS NPN 40V SOT323
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MMBT3904WT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 200 mA
• Current, Gain: 30
• Frequency: 300 MHz
• Package Type: SC-70 (SOT-323)
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.3 V
• Voltage, Emitter To Base: 6 V
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3904WT1GOS; MMBT3904WT1GOS; MMBT3904WT1GOSTR

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
= 10 mAdc, I
= −10 mAdc, I
= 1.0 mAdc, I
= −1.0 mAdc, I
= 10 mAdc, I
= −10 mAdc, I
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= 30 Vdc, V
= −30 Vdc, V
= 30 Vdc, V
= −30 Vdc, V
C
E
B
B
B
B
B
E
C
CE
CE
EB
EB
= 0)
= 0)
B
B
B
B
CE
CE
B
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
CE
CE
CE
= 0)
= 0)
EB
EB
= 0)
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= 0)
= 1.0 Vdc)
= 1.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −3.0 Vdc)
= −3.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
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2
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
I
h
CEX
I
BL
FE
−0.65
−5.0
0.65
Min
−40
−40
100
100
6.0
40
60
40
70
60
30
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
0.85
0.95
−50
−50
300
300
0.2
0.3
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
−