MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 8

• Manufacturer Part Number: MMBT3904WT1G
• Description: TRANS GP SS NPN 40V SOT323
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MMBT3904WT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 200 mA
• Current, Gain: 30
• Frequency: 300 MHz
• Package Type: SC-70 (SOT-323)
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.3 V
• Voltage, Emitter To Base: 6 V
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3904WT1GOS; MMBT3904WT1GOS; MMBT3904WT1GOSTR

+10.6 V
500
300
200
100
5.0
4.0
3.0
2.0
1.0
70
50
30
20
10
7
5
0
1.0
0.1
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
0.2
C
2.0 3.0
= 1.0 mA
< 1 ns
Figure 22. Delay and Rise Time
0.4
DUTY CYCLE = 2%
Figure 24. Turn −On Time
I
Equivalent Test Circuit
C
SOURCE RESISTANCE = 200 W
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
300 ns
= 0.5 mA
1.0
MMBT3906WT1
f, FREQUENCY (kHz)
Figure 26.
10
2.0
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
10 k
t
d
@ V
4.0
SOURCE RESISTANCE = 2.0 k
I
C
20
OB
= 50 mA
TYPICAL TRANSIENT CHARACTERISTICS
(V
= 0 V
t
30
r
CE
@ V
10
* Total shunt capacitance of test jig and connectors
= −5.0 Vdc, T
CC
50
MMBT3906WT1
3 V
NOISE FIGURE VARIATIONS
20
= 3.0 V
70
I
C
275
/I
C
100
40
B
S
= 10
http://onsemi.com
< 4 pF*
15 V
MMBT3906WT1
2.0 V
40 V
A
DUTY CYCLE = 2%
200
100
= 25°C, Bandwidth = 1.0 Hz)
10 < t
T
T
J
J
8
= 25°C
= 125°C
1
< 500 ms
500
300
200
100
70
50
30
20
10
8.0
6.0
4.0
2.0
0
12
10
7
5
0
1.0
0.1
+ 9.1 V
f = 1.0 kHz
0.2
t
1
2.0 3.0
0.4
Figure 23. Storage and Fall Time
10.9 V
I
C
R
, COLLECTOR CURRENT (mA)
5.0 7.0
Figure 25. Fall Time
S
< 1 ns
, SOURCE RESISTANCE (kW)
Equivalent Test Circuit
1.0
MMBT3906WT1
I
I
Figure 27.
C
C
10
2.0
/I
= 0.5 mA
I
B
C
= 10
= 1.0 mA
1N916
10 k
4.0
I
C
20
/I
B
= 20
30
10
MMBT3906WT1
50
20
3 V
V
I
B1
70
CC
I
= I
C
I
C
= 40 V
100
275
40
= 100 mA
B2
= 50 mA
C
S
< 4 pF*
200
100