MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT3904WT1G
• Description: TRANS GP SS NPN 40V SOT323
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MMBT3904WT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 200 mA
• Current, Gain: 30
• Frequency: 300 MHz
• Package Type: SC-70 (SOT-323)
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.3 V
• Voltage, Emitter To Base: 6 V
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3904WT1GOS; MMBT3904WT1GOS; MMBT3904WT1GOSTR

- 0.5 V
ELECTRICAL CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
DUTY CYCLE = 2%
300 ns
(I
(I
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
Characteristic
C
C
CB
CB
EB
EB
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 10 mAdc, V
= −10 mAdc, V
= 0.5 Vdc, I
= −0.5 Vdc, I
= 5.0 Vdc, I
= −5.0 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 5.0 Vdc, I
= −5.0 Vdc, I
Figure 1. Delay and Rise Time
C
C
C
C
C
CE
E
C
C
C
C
C
Equivalent Test Circuit
CE
E
C
C
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 100 mAdc, R
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
+10.9 V
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 20 Vdc, f = 100 MHz)
= −100 mAdc, R
< 1 ns
= −20 Vdc, f = 100 MHz)
(V
(V
(I
(I
(V
(V
(I
(I
C
C
B1
B1
CC
CC
CC
CC
= 10 mAdc, I
= −10 mAdc, I
= I
= I
= 3.0 Vdc, V
= −3.0 Vdc, V
= 3.0 Vdc, I
= −3.0 Vdc, I
10 k
B2
B2
= 1.0 mAdc)
= −1.0 mAdc)
S
Characteristic
= 1.0 k W, f = 1.0 kHz)
S
= 1.0 k W, f = 1.0 kHz)
(T
B1
C
B1
A
BE
C
= 1.0 mAdc)
= 10 mAdc)
BE
= 25°C unless otherwise noted) (Continued)
* Total shunt capacitance of test jig and connectors
= −1.0 mAdc)
= −10 mAdc)
= − 0.5 Vdc)
+3 V
= 0.5 Vdc)
Condition
275
C
S
http://onsemi.com
< 4 pF*
MMBT3904WT1
10 < t
DUTY CYCLE = 2%
1
3
< 500 ms
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
0
- 9.1 V
t
1
Figure 2. Storage and Fall Time
+10.9 V
< 1 ns
Symbol
Symbol
Equivalent Test Circuit
C
C
h
NF
h
h
h
f
t
obo
t
t
t
ibo
oe
T
re
fe
d
s
ie
r
f
1N916
10 k
Min
300
250
100
100
Min
1.0
2.0
0.5
0.1
1.0
3.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
10.0
Max
400
400
200
225
+3 V
4.0
4.5
8.0
8.0
5.0
4.0
10
12
10
40
60
35
35
35
35
50
75
−
−
275
C
S
X 10
mmhos
Unit
MHz
Unit
< 4 pF*
k W
dB
pF
pF
ns
ns
−
− 4