PMBTA42,215 NXP Semiconductors, PMBTA42,215 Datasheet - Page 2

TRANS NPN HV 100MA 300V SOT23

PMBTA42,215

Manufacturer Part Number
PMBTA42,215
Description
TRANS NPN HV 100MA 300V SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBTA42,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
250mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Gain Bandwidth Product Ft
50 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage
300V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
25
Frequency (max)
50MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1746-2
933776090215
PMBTA42 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBTA42,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
PMBTA42_5
Product data sheet
Table 3.
[1]
Table 4.
[1]
[2]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
PMBTA42
PMBTA42/DG
Type number
PMBTA42
PMBTA42/DG
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
/DG: halogen-free
/DG: halogen-free
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
[1]
Package
Name
-
Rev. 05 — 12 December 2008
Description
plastic surface-mounted package; 3 leads
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
≤ 1 ms
≤ 1 ms
≤ 25 °C
300 V, 100 mA NPN high-voltage transistor
Marking code
*1D
*BV
[2]
[1]
Min
-
-
-
-
-
-
-
−65
−65
-
PMBTA42
© NXP B.V. 2008. All rights reserved.
Max
300
300
6
100
200
100
250
150
+150
+150
Version
SOT23
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
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