PMBTA42,215 NXP Semiconductors, PMBTA42,215 Datasheet - Page 3

• Manufacturer Part Number: PMBTA42,215
• Description: TRANS NPN HV 100MA 300V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBTA42,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 250mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 25
• Gain Bandwidth Product Ft: 50 MHz
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 300V
• Collector-base Voltage: 300V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 25
• Frequency (max): 50MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1746-2; 933776090215; PMBTA42 T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMBTA42_5
Product data sheet
Table 6.
[1]
Table 7.
T
Symbol
R
Symbol
I
I
h
V
V
C
f
CBO
EBO
T
amb
FE
CEsat
BEsat
th(j-a)
re
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25
°
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
feedback capacitance
transition frequency
Parameter
thermal resistance from
junction to ambient
Rev. 05 — 12 December 2008
Conditions
V
V
V
I
I
V
f = 1 MHz
f = 100 MHz
V
C
C
CB
EB
CE
CB
CE
I
I
I
= 20 mA; I
= 20 mA; I
C
C
C
= 6 V; I
= 200 V; I
= 10 V
= 20 V; I
= 20 V; I
= 1 mA
= 10 mA
= 30 mA
Conditions
in free air
300 V, 100 mA NPN high-voltage transistor
C
B
B
C
C
= 0 A
E
= 2 mA
= 2 mA
= i
= 10 mA;
= 0 A
c
= 0 A;
[1]
Min
-
Min
-
-
25
40
40
-
-
-
50
PMBTA42
Typ
-
Typ
-
-
-
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
500
Max
100
100
-
-
-
500
900
3
-
Unit
K/W
Unit
nA
nA
mV
mV
pF
MHz
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