PBSS9110Z,135 NXP Semiconductors, PBSS9110Z,135 Datasheet

TRANS PNP 100V 1A SOT223

PBSS9110Z,135

Manufacturer Part Number
PBSS9110Z,135
Description
TRANS PNP 100V 1A SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS9110Z,135

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
320mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 500mA, 5V
Power - Max
1.4W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1400 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057978135
PBSS9110Z /T3
PBSS9110Z /T3
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110Z.
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS9110Z
100 V, 1 A PNP low V
Rev. 03 — 11 December 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
CEsat
FE
Conditions
open base
single pulse;
t
I
I
) at high I
p
C
B
C
≤ 1 ms
= −100 mA
= −1 A;
and I
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
170
Product data sheet
Max
−100
−1
−3
320
Unit
V
A
A

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PBSS9110Z,135 Summary of contents

Page 1

PBSS9110Z 100 PNP low V Rev. 03 — 11 December 2009 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110Z. 1.2 Features Low collector-emitter saturation voltage V High ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS9110Z 4. Marking Table 4. Type number PBSS9110Z 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot PBSS9110Z_3 Product data sheet Pinning Description ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm ...

Page 4

... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 − FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 ...

Page 5

... NXP Semiconductors th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6cm Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS9110Z_3 Product data sheet −3 − ...

Page 6

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter cut-off CES current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter saturation BEsat voltage V base-emitter turn-on BEon voltage t delay time ...

Page 7

... NXP Semiconductors 600 ( 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values −1 (V) (1) −0.8 (2) (3) −0.4 0 −1 −10 −1 − ...

Page 8

... NXP Semiconductors −1 V CEsat (V) −1 −10 (1) (2) (3) −2 −10 −1 −10 −1 −10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω (1) (2) (3) 1 −1 10 −1 − ...

Page 9

... NXP Semiconductors 8. Test information − − Fig 13. BISS transistor switching time definition V Fig 14. Test circuit for switching times PBSS9110Z_3 Product data sheet (probe) oscilloscope 450 Ω − −0 −0.025 Bon Rev. 03 — 11 December 2009 PBSS9110Z 100 PNP low V (BISS) transistor CEsat ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS9110Z [1] For further information and the availability of packing methods, see PBSS9110Z_3 Product data sheet 6.7 6 ...

Page 11

... NXP Semiconductors 11. Soldering 1.3 1.2 (4×) (4×) Fig 16. Reflow soldering footprint SOT223 (SC-73) 1.9 Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS9110Z_3 Product data sheet 100 PNP low V 7 3.85 3.6 3.5 0 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 8.9 6 ...

Page 12

... Document ID Release date PBSS9110Z_3 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering footprint SOT223 • Figure 17 “Wave soldering footprint SOT223 ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...

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