PBSS9110Z,135 NXP Semiconductors, PBSS9110Z,135 Datasheet - Page 9

• Manufacturer Part Number: PBSS9110Z,135
• Description: TRANS PNP 100V 1A SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS9110Z,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 1.4W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057978135; PBSS9110Z /T3; PBSS9110Z /T3

NXP Semiconductors
8. Test information
PBSS9110Z_3
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
V
CC
= −10 V; I
oscilloscope
t
d
t
C
on
Rev. 03 — 11 December 2009
= −0.5 A; I
V
t
I
r
(probe)
450 Ω
Bon
= −0.025 A; I
R1
R2
R
B
V
BB
100 V, 1 A PNP low V
Boff
R
= 0.025 A
C
V
CC
DUT
V
o
mgd624
− I
(probe)
450 Ω
Bon
t
− I
s
(100 %)
Boff
t
off
oscilloscope
PBSS9110Z
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
− I
006aaa266
C
(100 %)
t
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