PBSS9110Z,135 NXP Semiconductors, PBSS9110Z,135 Datasheet - Page 4

• Manufacturer Part Number: PBSS9110Z,135
• Description: TRANS PNP 100V 1A SOT223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS9110Z,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 320mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 1.4W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1400 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057978135; PBSS9110Z /T3; PBSS9110Z /T3

NXP Semiconductors
PBSS9110Z_3
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
−1
−1
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
duty cycle =
0.05
0.02
0.01
duty cycle =
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
1
0
1
0
0.75
0.33
0.75
0.33
10
10
−4
−4
10
10
−3
−3
10
10
2
Rev. 03 — 11 December 2009
−2
−2
10
10
−1
−1
100 V, 1 A PNP low V
1
1
10
10
PBSS9110Z
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa819
006aaa820
(s)
(s)
10
10
3
3
4 of 14