PDTD113ZT,215 NXP Semiconductors, PDTD113ZT,215 Datasheet - Page 4

• Manufacturer Part Number: PDTD113ZT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD113ZT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 10
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058981215; PDTD113ZT T/R; PDTD113ZT T/R

NXP Semiconductors
PDTD113ZT_2
Product data sheet
Fig 1.
Fig 3.
V
h
(V)
I(on)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
FE
10
10
10
10
1
1
3
2
10
1
10
V
DC current gain as a function of collector
current; typical values
V
On-state input voltage as a function of
collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 5 V
= 0.3 V
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
10
10
10
10
2
2
I
I
006aaa314
006aaa316
C
C
(mA)
(mA)
NPN 500 mA resistor-equipped transistor; R1 = 1 k , R2 = 10 k
(1)
(2)
(3)
10
10
Rev. 02 — 23 March 2009
3
3
Fig 2.
Fig 4.
V
V
CEsat
(V)
(V)
I(off)
10
10
(1) T
(2) T
(3) T
10
(1) T
(2) T
(3) T
1
1
2
1
10
1
I
Collector-emitter saturation voltage as a
function of collector current; typical values
V
Off-state input voltage as a function of
collector current; typical values
C
amb
amb
amb
amb
amb
amb
CE
1
/I
B
= 5 V
= 20
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
10
1
(1)
(2)
(3)
PDTD113ZT
10
2
I
C
(mA)
I
© NXP B.V. 2009. All rights reserved.
(1)
(2)
(3)
C
(mA)
006aaa315
006aaa317
10
10
3
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