PDTD113ZT,215 NXP Semiconductors, PDTD113ZT,215 Datasheet - Page 9

• Manufacturer Part Number: PDTD113ZT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD113ZT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 10
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058981215; PDTD113ZT T/R; PDTD113ZT T/R

NXP Semiconductors
14. Contents
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1.1
1.2
1.3
1.4
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12
12.1
12.2
12.3
12.4
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14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Packing information. . . . . . . . . . . . . . . . . . . . . . 5
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
Contact information. . . . . . . . . . . . . . . . . . . . . . 8
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
NPN 500 mA resistor-equipped transistor; R1 = 1 k , R2 = 10 k
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
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PDTD113ZT
Document identifier: PDTD113ZT_2
Date of release: 23 March 2009
All rights reserved.