PDTD113ZT,215 NXP Semiconductors, PDTD113ZT,215 Datasheet - Page 7

• Manufacturer Part Number: PDTD113ZT,215
• Description: TRANS NPN W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTD113ZT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 10
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058981215; PDTD113ZT T/R; PDTD113ZT T/R

NXP Semiconductors
11. Revision history
Table 9.
PDTD113ZT_2
Product data sheet
Document ID
PDTD113ZT_2
Modifications:
PDTD113Z_SER_1
Revision history
Release date
20090323
20050405
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•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type numbers PDTD113ZK and PDTD113ZS removed
Table 5 “Limiting
Section 10
Section 12 “Legal
“Soldering”: added
NPN 500 mA resistor-equipped transistor; R1 = 1 k , R2 = 10 k
Data sheet status
Product data sheet
Product data sheet
values”: typo for maximum value of V
Rev. 02 — 23 March 2009
information”: updated
Change notice
-
-
I
positive corrected
PDTD113ZT
Supersedes
PDTD113Z_SER_1
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© NXP B.V. 2009. All rights reserved.
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