IRLHS2242TRPBF International Rectifier, IRLHS2242TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLHS2242TRPBF
• Description: MOSFET P-CH 20V 15A 2X2 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS2242TRPBF

• Input Capacitance (ciss) @ Vds: 877pF @ 10V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 15 A
• Power Dissipation: 9.6 W
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLHS2242TRPBFTR

IRLHS2242TR/TR2PbF
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
Q
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Avalanche Characteristics
Diode Characteristics
Thermal Resistance
R
R
R
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
g
g
gs
gd
godr
sw
oss
rr
θJC
θJC
θJA
θJA
GS(th)
2
DSS
DSS
(<10s)
(Bottom)
(Top)
/ΔT
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
Parameter
Parameter
gs2
™
+ Q
gd
)
f
f
Parameter
Time is dominated by parasitic Inductance
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
10
0.01
–––
-0.8
-3.8
–––
–––
–––
–––
–––
877
273
182
–––
–––
–––
9.6
1.6
3.7
4.3
4.8
6.8
7.9
25
43
12
17
54
54
66
27
20
-8.5
-150
-100
Typ.
–––
–––
-1.1
––– mV/°C
-1.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.2
-34
31
53
41
30
h
V/°C
mΩ
μA
nA
nC
nC
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
V
ID = -8.5A
R
V
V
ƒ = 1.0KHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 200A/μs
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DS
DD
GS
DS
G
= -8.5A
= 25°C, I
= 25°C, I
= 2.0Ω
= V
= -16V, V
= -16V, V
= -10V, I
= -10V
= 16V, V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -12V
= 12V
=-10V, V
= -4.5V
= -10V, V
= 0V
Typ.
–––
–––
–––
–––
GS
Max.
-8.5
, I
18
D
D
S
F
= -250μA
D
GS
DS
= -10μA
D
D
= -8.5A, V
GS
GS
GS
= -8.5A, V
= -8.5A
Conditions
Conditions
= -8.5A
= -6.8A
= 0V
eÃ
= -10V, I
= 0V
= 0V, T
= -4.5V
Max.
D
13
90
60
42
= -1mA
e
e
GS
DD
J
D
= 125°C
= -8.5A
= -10V
www.irf.com
= 0V
G
Units
mJ
e
A
Units
°C/W
D
S