IRLHS2242TRPBF International Rectifier, IRLHS2242TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLHS2242TRPBF
• Description: MOSFET P-CH 20V 15A 2X2 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS2242TRPBF

• Input Capacitance (ciss) @ Vds: 877pF @ 10V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 15 A
• Power Dissipation: 9.6 W
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLHS2242TRPBFTR

IRLHS2242TR/TR2PbF
0
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6
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Fig 17a. Gate Charge Test Circuit
Fig 16.
D.U.T
*
20K
1K
ƒ
+
-
•
•
•
•
SD
•
•
•
S
S
DUT
G
-
„
L
+
+
-
VCC
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Id
Waveform
Waveform
Vgs
Fig 17b. Gate Charge Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
®
Power MOSFETs
dv/dt
Forward Drop
Qgodr
di/dt
D =
Period
P.W.
Qgd
Qgs2
V
V
I
SD
GS
DD
=10V
Vgs(th)
www.irf.com
Vds
Qgs1